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Data Sheet PU10542EJ02V0DS
4
NE55410GR
RF CHARACTERISTICS (TA
= +25?C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Q1
Gain 1 dB Compression Output Power
PO (1 dB)
f = 2 140 MHz, VDS
= 28 V,
?
35.4
?
dBm
Drain Efficiency
?d
IDset
= 20 mA
?
52
?
%
Linear Gain
GL
Pin
= 15 dBm
12
13.5
?
dB
Q2
Gain 1 dB Compression Output Power
PO (1 dB)
f = 2 140 MHz, VDS
= 28 V,
?
40.4
?
dBm
Drain Efficiency
?d
IDset
= 100 mA
?
46
?
%
Linear Gain
GL
Pin
= 20 dBm
9.5
11
?
dB
Gain 1 dB Compression Output Power
PO (1 dB)
f = 1 840 MHz, VDS
= 28 V,
?
40.5
?
dBm
Drain Efficiency
?d
IDset
= 100 mA
?
49
?
%
Linear Gain
GL
Pin
= 20 dBm
?
14
?
dB
Q1 + Q2
Gain 1 dB Compression Output Power
PO (1 dB)
f = 880 MHz, VDS
= 28 V,
?
41.5
?
dBm
Drain Efficiency
?d
IDset
= 120 mA (Q1 + Q2)
?
55
?
%
Linear Gain
GL
Pin
= 5 dBm
?
30
?
dB
Gain 1 dB Compression Output Power
PO (1 dB)
f = 2 140 MHz, VDS
= 28 V,
?
40.0
?
dBm
Drain Efficiency
?d
IDset
= 120 mA (Q1 + Q2)
34
42
?
%
Output Power
Pout
Pin
= 16 dBm
39
40
?
dB
Linear Gain
GL
Pin
= 10 dBm
24
25
?
dB
3rd Order Intermodulation Distortion
IM3
f = 2 132.5/2 147.5 MHz, VDS
= 28 V,
2 carrier W-CDMA 3GPP, Test
Model1, 64DPCH, 67% Clipping,
IDset
= 120 mA (Q1 + Q2),
Ave Pout
= 33 dBm
?
?40
?
dBc
Drain Efficiency
?d
?
21
?
%
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